Highly efficient harmonic-tuned GaN HEMT power amplifier for a 2.45 GHz ISM band

Abstract

This paper presents a design of highly efficient high power amplifier with CGH40010 transistor. The amplifier provides more than 15W of output power and 61% PAE over a 2.4 GHz to 2.5 GHz frequency range. A method of harmonic tuning is applied in the design. By the use of this method it was possible to achieve even 30% more power than the transistor is specified to deliver, while maintaining high gain and efficiency.