Experimental analog performance of pTFETs as a function of temperature

Abstract

This paper presents an experimental study of the pTFET analog performance as a function of the temperature. It was observed that the gm improves with the temperature while the gD degrades. The gD degradation was the predominant effect which causes an AV reduction with temperature increase. However, independent of the temperature, comparing the pTFET and the pFinFET with the similar structure and same bias conditions, the first one presents a better analog performance in the temperature studied. The pTFET shows to be a good option for analog applications.