High energy resolution pixel detectors based on boron oxide vertical Bridgman grown CdZnTe crystals

Abstract

CdZnTe crystals are used for the realization of X-ray detectors. In particular, pixel detectors can be exploited for many application fields such as medical diagnostics, security, and industrial inspection. In the last years, CdZnTe crystals have routinely been grown by the boron oxide encapsulated vertical Bridgman technique. In this work, it is shown that linear array detectors have been prepared based on this material. The detectors show low leakage current and have been coupled to a specifically designed research-grade low noise ASIC. The detectors show good spectroscopic characteristics and no polarization effects, meeting the requirements for the realization of high throughput, multi-energy scanners.