Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies

Woon-Gi Yeo, N. Nahar, K. Sertel
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Abstract

We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.
双波段,宽入射角吸收器远红外和太赫兹频率
我们提出了一种电薄,双波段,完美的吸收器设计,可以缩放到在远红外(FIR)或太赫兹波段工作。利用附加的寄生尖端金属化修饰了由交叉偶极子组成的双极化频率选择表面(FSS),以实现双波段性能。导电FSS层被放置在由金属接地支撑的碳化硅(SiC)衬底上。该结构优化了横向电(TE)和横向磁(TM)极化在宽入射角范围内的吸收效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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