Millimetre-wave InP/InGaAs photo-HBT and its application to a double-stage cascode optoelectronic mixer

2002 International Topical Meeting on Microwave Photonics Pub Date : 1900-01-01 DOI:10.1109/MWP.2002.1158934

M. Muller, M. Riet, C. Fortin, S. Withitsoonthorn, J. d'Orgeval, C. Gonzalez

引用次数: 7

Abstract

We present an ultra-high-speed InP/InGaAs bipolar phototransistor (HPT) with a record optical gain cut-off frequency of 110 GHz and an HPT/HBT two-stage cascode upconverting mixer with a conversion gain of 17 dB at 28 GHz, that is also the highest reported for monolithically integrated optoelectronic mixers.

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毫米波InP/InGaAs光- hbt及其在双级级级光电混频器中的应用

我们提出了一种超高速InP/InGaAs双极光电晶体管(HPT)，其光增益截止频率为110 GHz, HPT/HBT两级级联码上变频混频器，在28 GHz时转换增益为17 dB，这也是报道的单片集成光电混频器中最高的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 International Topical Meeting on Microwave Photonics

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