The optimal conditions of obtaining AlN-layers on sapphire with MBE method

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Pub Date : 2009-07-01 DOI:10.1109/EDM.2009.5173923

T. Malin, K. Zhuravlev, V. Mansurov

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Abstract

In given work the method for growing the AlN layers on sapphire substrate with MBE method from ammonia is considered. An influence of growth conditions on quality of obtaining layers is investigated.

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用MBE法在蓝宝石表面制备aln层的最佳工艺条件

本文研究了以氨为原料，用MBE法在蓝宝石衬底上生长AlN层的方法。研究了生长条件对所得层质量的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices

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