Design and Verification of TDDB Test Structures For TSV

Abstract

In this paper, two TDDB test structures of TSV, including Single-TSV and Dual-TSV, have been designed. In order to compare the availability between these two test structures, the electric field simulation and TDDB failure analysis have been carried out. The simulation results show that the Single- TSV is more prone to abnormal breakdown for its higher electric field between surface pads during TDDB test. On the contrary, the Dual- Tsvhas a greater probability of breakdown in the dielectric liner of TSV, because the maximum of electric field is located at the dielectric liner. The conclusion of TDDB failure analysis support the point of simulation. The Dual- Tsvhas better availability than the Single- TSV for the TDDB test of TSV. Furthermore, we discussed the guidelines for the design of TSV TDDB test structures.