SiGe hetero FETs on silicon at cryogenic temperature

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI:10.1109/WOLTE.2002.1022440

F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig

引用次数: 7

Abstract

Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.

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低温下硅上的SiGe异质场效应管

良好的输运性能和带隙工程使得SiGe合金技术在微电子领域越来越重要。从中频和低噪声两个方面综述了SiGe异质场效应管在低温下的输运特性、性能和潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 5th European Workshop on Low Temperature Electronics

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