Study on Measurement Method of Microscopic $\zeta$ Potential

Yuichi Watanabe, Hirofumi Ikawa, Shota Suzuki, T. Isobe, Tatsuhiko Hirano, K. Sugai
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Abstract

A material removal rate in CMP process is affected by a frequency of contact between the abrasives and the wafer because of the electrostatic interaction. Control of ζpotential in a micro region was considered to be a key for slurry design, and research on its measurement method was conducted. FD curve was measured in liquid using AFM. As a result, it was found that load of the cantilever observed during the jump-in strongly reflects the ζpotential. Furthermore, we achieved to measure microscopic ζpotential on the patterned wafer.
微观zeta电位测量方法的研究
由于静电相互作用,磨料与晶圆片之间的接触频率会影响CMP工艺中材料的去除率。认为微区ζ电位的控制是浆料设计的关键,并对其测量方法进行了研究。用原子力显微镜测定液体中FD曲线。结果表明,悬臂梁在跳入过程中所受载荷强烈地反映了ζ电位。此外,我们还实现了对图像化晶圆上微观ζ电位的测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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