Yuichi Watanabe, Hirofumi Ikawa, Shota Suzuki, T. Isobe, Tatsuhiko Hirano, K. Sugai
{"title":"Study on Measurement Method of Microscopic $\\zeta$ Potential","authors":"Yuichi Watanabe, Hirofumi Ikawa, Shota Suzuki, T. Isobe, Tatsuhiko Hirano, K. Sugai","doi":"10.1109/ISSM51728.2020.9377533","DOIUrl":null,"url":null,"abstract":"A material removal rate in CMP process is affected by a frequency of contact between the abrasives and the wafer because of the electrostatic interaction. Control of ζpotential in a micro region was considered to be a key for slurry design, and research on its measurement method was conducted. FD curve was measured in liquid using AFM. As a result, it was found that load of the cantilever observed during the jump-in strongly reflects the ζpotential. Furthermore, we achieved to measure microscopic ζpotential on the patterned wafer.","PeriodicalId":270309,"journal":{"name":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM51728.2020.9377533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A material removal rate in CMP process is affected by a frequency of contact between the abrasives and the wafer because of the electrostatic interaction. Control of ζpotential in a micro region was considered to be a key for slurry design, and research on its measurement method was conducted. FD curve was measured in liquid using AFM. As a result, it was found that load of the cantilever observed during the jump-in strongly reflects the ζpotential. Furthermore, we achieved to measure microscopic ζpotential on the patterned wafer.