Growth and luminescent properties of Lu3(Ga,In)5O12:Eu3+ epitaxial films

A. Luchechko, I. Syvorotka, Y. Zakharko, I. Syvorotka
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引用次数: 1

Abstract

High quality thin epitaxial films of Lu3(Ga,In)5O12:Eu3+ with high effective atomic number were grown by liquid phase epitaxy method. Excitation and emission spectra of Lu3(Ga,In)5O12:Eu3+ epitaxial films were studied under UV and X-ray excitations. The photo- and X-ray luminescence spectra of Eu3+ ions in Lu3(Ga,In)5O12:Eu3+ are characteristic to the f→f transition in the Eu3+ ions that occupied dodecahedral sites in the garnet structure. The ratio of the bands intensities in luminescence spectra under different types of excitation was determined.
Lu3(Ga,In) 5012:Eu3+外延薄膜的生长和发光性能
采用液相外延法制备了具有高有效原子序数的Lu3(Ga,In)5O12:Eu3+薄膜。研究了Lu3(Ga,In)5O12:Eu3+外延薄膜在紫外和x射线激发下的激发和发射光谱。在Lu3(Ga, in)5O12:Eu3+中,Eu3+离子的光和x射线发光光谱特征为占据石榴石十二面体位置的Eu3+离子的f→f跃迁。测定了不同激发方式下发光光谱中各波段强度的比值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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