Hydrogenation effect on 1.54-/spl mu/m Er luminescence in Er-doped amorphous silicon quantum dot films

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416673

N. Park, Taeyoub Kim, Kyung‐Hyun Kim, G. Sung, K. Cho, J. Shin, B. Kim, Seong-Ju Park, Jung-Kun Lee, M. Nastasi

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Abstract

The effect of hydrogenation on Er luminescence depending on the dot size could be explained by Er migration and the number of Er ions near a Si dot before hydrogenation. However, further studies will be needed to completely understand hydrogenation effect.

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掺铒非晶硅量子点薄膜中1.54-/spl μ m Er发光的氢化效应

加氢对Er发光的影响取决于点的大小，可以用加氢前的Er迁移和靠近Si点的Er离子的数量来解释。然而，要完全了解氢化效应还需要进一步的研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First IEEE International Conference on Group IV Photonics, 2004.

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