Electroluminescence and infrared gain in strained GaSb quantum dots in silicon

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416652

S. Fukatsu, M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto

引用次数: 0

Abstract

Compound semiconductor quantum dots (QDs) buried in Si have been developed as a new class of band-gap engineered Si-based QDs. It is demonstrated that the excellent optical properties of GaSb/Si QDs allow gain in the near-infrared.

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硅中应变GaSb量子点的电致发光和红外增益

埋于硅中的化合物半导体量子点(QDs)是一类新型的带隙工程硅基量子点。结果表明，GaSb/Si量子点具有优异的光学特性，可在近红外波段获得增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

First IEEE International Conference on Group IV Photonics, 2004.

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