The use of microwaves to characterize optically stimulated semiconductors

Abstract

The author discusses a theoretical model describing the microwave transmission and reflection properties of semiconductor wafers after they have been illuminated by a short pulse of light from a laser. The model has three fundamental parts. The first part describes the absorption mechanism of the incident light pulse throughout the semiconductor, given the electron-hole-pair concentration as a function of position. In the second part the electron-hole-pair concentration during the decay process is described. Part three describes the microwave properties of the semiconductor as the electron-hole pairs return to their equilibrium state.<>