Optimization of the gain curve of the InGaN blue light laser diode

Yen‐Chang Chen, T. Kung, Yuh‐Renn Wu
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引用次数: 1

Abstract

A laser diode(LD) structure is simulated by the Poisson, drift-diffusion, and Schrodinger equation solver and the Hemholtz equation solver. The gain curve has been optimized by optimizing the comparisons for different numbers of quantum well(QW), different indium composition in the QW and different size of the guiding layer.
InGaN蓝光激光二极管增益曲线的优化
用泊松方程、漂移扩散方程、薛定谔方程和赫姆霍兹方程求解器对激光二极管(LD)结构进行了数值模拟。通过对不同量子阱数、不同量子阱中铟成分和不同导层尺寸的优化比较,优化了增益曲线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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