Plasma annealing as an effective method for the crystallization of bismuth iron garnet films

Abstract

Oxygen plasma annealing was used to crystallise (BiDy)₃(FeGa)₅O₁₂ (Bi:DyIG) at a temperature of 515°C, which is over 100°C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.