Site-controlled single photon emitters based on InGaN/GaN quantum dots

2012 International Conference on Optical MEMS and Nanophotonics Pub Date : 2012-10-04 DOI:10.1109/OMEMS.2012.6318886

Lei Zhang, T. Hill, H. Deng, L. Lee, Chu-hsiang Teng, P. Ku

引用次数: 0

Abstract

Site-controlled single photon emitters with emission wavelengths matched to the peak efficiency of silicon single photon detectors were demonstrated using lithographically defined InGaN/GaN quantum dots. A drastic strain-relaxation-induced enhancement of radiative efficiency was observed.

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基于InGaN/GaN量子点的点控单光子发射器

利用光刻定义的InGaN/GaN量子点，展示了发射波长与硅单光子探测器峰值效率匹配的位置控制单光子发射器。观察到应变松弛引起的辐射效率的急剧增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 International Conference on Optical MEMS and Nanophotonics

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