A Ka-band CMOS low-phase-variation variable gain amplifier with good matching capacity

Pei-Hua Lo, Chien-Chih Lin, Hsin-Chih Kuo, H. Chuang
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引用次数: 3

Abstract

This paper presents a Ka-band variable gain amplifier (VGA) fabricated in a standard 0.18-μm CMOS process using the proposed cascade amplifier method to achieve both low phase variation and good output matching capacity in a variable gain mode. The proposed VGA achieves 14.2 dB gain control range with a phase variation of 8.9°. The input and output reflection coefficients versus the gain control bias at 26.6 GHz are below -19 dB and -10 dB, respectively. A 14.2 dB gain control range with low phase variation and good input and output matching is achieved. The chip size is 0.65 mm2 with pads.
一种具有良好匹配能力的ka波段CMOS低相位变增益放大器
本文设计了一种ka波段可变增益放大器(VGA),该放大器采用该级联放大器方法,在标准0.18 μm CMOS工艺中实现了低相位变化和良好的输出匹配能力。所提出的VGA实现14.2 dB增益控制范围,相位变化为8.9°。26.6 GHz时的输入和输出反射系数相对于增益控制偏置分别低于-19 dB和-10 dB。实现了14.2 dB增益控制范围,相位变化小,输入输出匹配良好。包含衬垫的芯片尺寸为0.65 mm2。
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