Two-Terminal Devices in Millimeter-Wave Range: Physical Analysis and Future Trends

1990 20th European Microwave Conference Pub Date : 1990-10-01 DOI:10.1109/EUMA.1990.336168

P. Rolland, M. Friscourt, C. Dalle, D. Lippens, N. Haese

引用次数: 2

Abstract

This paper reviews the advance made in the perfomance of millimeter-wave two-terminal devices, mainly Gunn, IMPATT and resonant-tunneling diodes, on the basis of the semiconductor material systems used (Si, GaAs, InP).

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毫米波范围内的双端器件:物理分析和未来趋势

本文综述了毫米波双端器件的性能进展，主要是Gunn、IMPATT和谐振隧道二极管，基于所使用的半导体材料体系(Si、GaAs、InP)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1990 20th European Microwave Conference

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