Optimization of a high bit rate GaAs MESFET amplifier for optical reception

Abstract

A performance optimization of a transimpedance preamplifier used for 1.3- mu m digital optical reception is presented. The influence of the bias resistor on the high-frequency behavior of two GaAs MESFET circuits is analyzed. The two circuit configurations are analyzed with regard to sensitivity and dynamic range, using the Y parameters. It is shown that, although the number of components and the sensitivity of the two configurations are the same, the dynamic range is noticeably different.<>