Design of Ultra Wideband Amplifier Using Single Hetero-junction Bipolar Transistor for Wireless Applications

Abstract

The paper describes a technique for improvement in gain and noise figure of an Ultra Wideband amplifier. The paper gives an overview of the Ultra Wideband technology and the amplifier as well. The input to the amplifier comes from the UWB signal generator which is then sent to the antenna after amplification. The design is proposed using a single stage amplifier circuit and attains a better response along the bandwidth with minimum distortion and low losses. The circuit consists of Hetro-junction Bipolar transistor or HBT that is biased using a voltage divider bias. Key parameters have been analysed on Serenade SV simulation tool. The amplifier gain in the whole bandwidth has been improved and the noise figure is also reduced in that bandwidth. The reflection from the either ports in minimised substantially. The proposed amplifier has a simple structure and works satisfactorily over the entire bandwidth.