Power device solutions for highly efficient power supplies

R. Siemieniec, René Mente, M. Kutschak, F. Pulsinelli
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Abstract

Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high efficiencies in order to minimize the overall energy consumption and the total cost of ownership. With the appearance of wide bandgap semiconductors designers cannot only choose between different devices but also may benefit from using advanced topologies. This work compares important properties of a CoolSiC ™ Silicon-Carbide MOSFET, a CoolGaN ™ E-mode GaN power transistor, a TRENCHSTOP 5 ™ IGBT accompanied by a SiC Schottky diode and a CoolMOS ™ Superjunction (SJ) device, and discusses an approach to avoid the limitations of SJ devices with respect to hard commutation of the body diode and evaluates the achievable efficiency in the AC-DC conversion stage of a power supply.
用于高效电源的电源器件解决方案
切换模式电源(SMPS)的目标应用范围广泛,从电信整流器到服务器,再到太阳能逆变器或电动汽车充电器,都需要高效率,以最大限度地降低总体能耗和总拥有成本。随着宽禁带半导体的出现,设计人员不仅可以在不同的器件之间进行选择,而且可以从使用先进的拓扑结构中受益。本研究比较了CoolSiC™碳化硅MOSFET、CoolGaN™E-mode GaN功率晶体管、TRENCHSTOP 5™IGBT(含SiC肖特基二极管)和CoolMOS™Superjunction (SJ)器件的重要特性,并讨论了避免SJ器件在体二极管硬换流方面的限制的方法,并评估了电源AC-DC转换阶段可实现的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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