Characteristics and design of a current sensor using multilayer Co/Ni structures

Abstract

Recent studies show the possibility of using amorphous materials as current sensors. In this paper, the magnetoresistance effect existing in multilayer (Co/sub 50/Ni/sub 25/)/sub 10/ structures has been used to develop a current sensor susceptible to be fully integrated. Experimental results have been obtained to compare the properties of the anisotropic magnetoresistance effect (AMR) with commercial ones.