{"title":"Logic Non-Volatile Memory - The NVM Solutions from eMemory","authors":"C. Hsu, Yuan-Tai Lin, E. Yang, R. Shen","doi":"10.1142/8765","DOIUrl":null,"url":null,"abstract":"Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells, such as Wordline and Bitline Drivers, Sense Amplifiers, Charge Pumps, and Verify Circuitries The Testing and Reliability of NVM The IP Specifications of NVM.","PeriodicalId":256342,"journal":{"name":"International Series on Advances in Solid State Electronics and Technology","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Series on Advances in Solid State Electronics and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/8765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Semiconductor Device Physics for the Non-Volatile Memory (NVM) Transistor Structures, Physics, and Operations - Described for the One Time Programmable (OTP), Multiple Times Programmable (MTP), Flash Memory, and Electrical Erasable Programmable Read Only Memory (EEPROM) The Basic Building Block Circuits to Read Out, Program, and Erase the Memory Cells, such as Wordline and Bitline Drivers, Sense Amplifiers, Charge Pumps, and Verify Circuitries The Testing and Reliability of NVM The IP Specifications of NVM.