L-Band GaAs FET Amplifier

Abstract

Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.