Response of silicon semiconductor detector to low-energy ions

Abstract

The response of a silicon surface barrier detector to low-energy ions below 40 keV were measured utilizing a single ion irradiation system. Data on pulse-height response to H/sup +/, He/sup +/ and Ar/sup +/ in the low-energy region were precisely obtained with a typical energy spectroscopy system and an averaging method with a digital oscilloscope. The experimental data agreed generally with results calculated by the computer simulation code for ion transportation, MARLOWE.