GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH 4 /O 2 /H 2 ATMOSPHERE

Abstract

Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 x 10(8) cm(-2) was realized in 3 min by near-surface glow discharge. The as-grown films were characterized. by scanning electron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H-2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM.