Numerical Simulation of a DNA Sensor Based on the CNT-Gold Island Structure

Abstract

A numerical simulation has been performed for the DNA sensors based on the field-effect-transistor (FET) structure of a CNT with the gold island- attached on the CNT tube. The model uses the Poisson-drift-diffusion theory for the CNT transistor and considers the charge exchange between the interfaces between the CNT and gold island, gold and the linker molecules. In order to compare with experiments, an example device is simulated to predict the response of the sensor to the target DNA's in both the air and aqueous solution.