VPE growth of high purity and high uniformity InGaAs/InP epitaxial layers on 2-inch diameter InP substrate

Abstract

An epitaxial InP/InGaAs/InP structure was grown on 2-in-diameter InP substrates by the chloride vapor-phase epitaxy (VPE) method. The undoped carrier concentration of both the InP and InGaAs layers was less than 1*10/sup 15/ cm/sup -3/. Hall mobility at 77 K was 85000 cm/sup 2//V-s. The variation of epi-layer thickness, carrier concentration and lattice mismatch across the wafer was less than 2%, 4% and 0.8%, respectively. The reproducibility of growth rate, carrier concentration, and lattice mismatch from run to run was less than 5%.<>