Multidimensional flash codes

Eitan Yaakobi, A. Vardy, P. Siegel, J. Wolf
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引用次数: 43

Abstract

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell level forces all the other cells in the same block to be erased. This erasing operation is undesirable and therefore has to be used as infrequently as possible. We consider the problem of designing codes for this purpose, where k bits are stored using a block of n cells with q levels each. The goal is to maximize the number of bit writes before an erase operation is required. We present an efficient construction of codes that can store an arbitrary number of bits. Our construction can be viewed as an extension to multiple dimensions of the earlier work of Jiang and Bruck, where single-dimensional codes that can store only 2 bits were proposed.
多维闪光码
闪存是一种由单元块组成的非易失性计算机存储器,其中每个单元可以具有q个不同的级别,对应于它所包含的电子数量。增加细胞水平很容易;但是,减少单元级别会强制擦除同一块中的所有其他单元。这种擦除操作是不可取的,因此必须尽可能少地使用。我们考虑为此目的设计代码的问题,其中k位使用n个单元的块存储,每个单元有q个级别。目标是在需要擦除操作之前最大化写比特的数量。我们提出了一种有效的编码结构,可以存储任意数量的比特。我们的构建可以看作是Jiang和Bruck早期工作的多维扩展,他们提出了只能存储2位的单维代码。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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