Controllable S-doping of graphene through annealing with hydrogen sulfide

Abstract

In this paper, an annealing method with hydrogen sulflde was employed for Sulfur-doping of graphene. Both copper and SiO2 were used as substrate in the experiment and the results showed that SiO2 was more proper for S-doping of graphene. Raman and EDS spectra indicated that sulfur atoms are doped into the graphene after annealing. By this way, graphene could be easily S-doped and the S-doping density could be controlled by varying the doping time.