A wide range 1.0 V-3.6 V 200 Mbps, push-pull output buffer using parasitic bipolar transistors

T. Shimada, H. Notani, Y. Nakase, H. Makino, S. Iwade
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引用次数: 0

Abstract

We proposed a push-pull output buffer that maintains the data transmission rate for lower supply voltages. It operates at an internal supply voltage (VDD) of 0.7-1.6 V and an interface supply voltage (VDDX) of 1.0-3.6 V. In low VDDX operation, the output buffer utilizes parasitic bipolar transistors instead of MOS transistors to maintain drivability. Furthermore forward body bias control is provided for the level converter in low VDD operation. We fabricated a test chip with a standard 0.15 /spl mu/m CMOS process. Measurement results indicate that the proposed output buffer achieves 200 Mbps operation at VDD of 0.7 V and VDDX of 1.0 V.
宽范围1.0 V-3.6 V 200mbps,推挽输出缓冲器采用寄生双极晶体管
我们提出了一个推挽输出缓冲器,在较低的电源电压下保持数据传输速率。它工作在0.7-1.6 V的内部电源电压(VDD)和1.0-3.6 V的接口电源电压(VDDX)。在低VDDX操作中,输出缓冲器使用寄生双极晶体管而不是MOS晶体管来保持可驱动性。此外,还为低VDD工作的电平变换器提供了正向体偏置控制。我们用标准的0.15 /spl mu/m CMOS工艺制作了一个测试芯片。测量结果表明,该输出缓冲器在VDD为0.7 V、VDDX为1.0 V时可实现200mbps的工作。
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