The research of microwave amplifier amplitude and phase noise using nonlinear CAD software

Abstract

In the present article the research results of amplitude and phase noise of amplifiers with GaAs transistors with a Schottky barrier are submitted. Their dependence on input signal level and physical properties of a field-effect transistor (breakdown voltages and gate widths) is shown. The research results allow one to forecast behavior of amplitude and phase noise of amplifiers, not resorting to labour-consuming measurements, to optimize structure of radar transmitters depending on specificity of their usage in a different range of Doppler signals.