Current sensivity of Si mosfet to terahertz irradiation

Abstract

There is an increased interest in the use of terahertz (THz) radiation (frequency range 0.1-10 THz) for various applications in the fields of security screening, medicine, radio astronomy, etc. Nowadays main concepts of THz radiation detection are well-studied which allowed to create such types of THz receivers as low temperature quasiparticle detectors, Schottky diodes, micro-bolometers, MOSFET and HEMT-detectors, etc [1].