Mathematical model of the microelectronic oscillator based on the BJT-MOSFET structure with negative differential resistance

Abstract

The paper considers an electric circuit of a microelectronic oscillator based on a BJT-MOSFET structure with negative differential resistance. A mathematical model of this oscillator has been developed. Theoretical and practical researches of oscillations dynamics have been carried out. Lyapunov exponents have been calculated. Limits of periodic and chaotic oscillations modes have been determined. Phase portraits, time and frequency dependences of oscillations have been obtained.