Photocurrent effects in an electroabsorption modulator integrated with SGDBR laser

Abstract

High photocurrent effects in an electroabsorption modulator are explored using the high output power from an integrated SGDBR laser followed by semiconductor optical amplifier. It is shown how the equivalent EAM junction resistance is reduced with photocurrent to lower than 30 /spl Omega/, how the modulation response is correspondingly affected and how the gain of electroabsorption-modulated analog links ultimately becomes limited by the absorbed photocurrent.