Transmission electron microscopy determination of quantum dot profile

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791594

X. Liao, J. Zou, X. Duan, D. Cockayne, R. Leon, C. Lobo

引用次数: 1

Abstract

Investigation of the morphology of buried and unburied In/sub x/Ga/sub 1-x/As/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped.

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透射电子显微镜测定量子点轮廓

利用截面透射显微镜和[001]区上亮场成像模拟技术，研究了埋藏和未埋藏In/sub x/Ga/sub 1-x/As/GaAs量子点(QDs)的形貌。研究表明，埋地和未埋地的量子点均呈透镜状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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