High-performance low-cost indium phosphide MMICs for commercial wireless applications

1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390) Pub Date : 1900-01-01 DOI:10.1109/MTTTWA.1999.755171

D. Streit, A. Oki, R. Lai, V. Medvedev, K. Kobayashi

引用次数: 0

Abstract

We describe a high-volume InP-based HEMT and HBT production line that produces both monolithic microwave and millimeter-wave circuits for wireless applications. Products as diverse as 900 MHz InP HBT cellular power amplifiers and 155 GHz InP HEMT low noise amplifiers are manufactured on the same fab line, modeled after our successful GaAs HEMT and HBT fab line. These products have found acceptance in both high volume commercial wireless applications as well as more specialized millimeter wave applications.

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用于商业无线应用的高性能低成本磷化铟mmic

我们描述了一个大批量的基于inp的HEMT和HBT生产线，生产用于无线应用的单片微波和毫米波电路。900 MHz InP HBT蜂窝功率放大器和155 GHz InP HEMT低噪声放大器的产品是在同一条晶圆生产线上生产的，以我们成功的GaAs HEMT和HBT晶圆生产线为模型。这些产品已被大量商用无线应用以及更专业的毫米波应用所接受。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications (Cat. No. 99TH8390)

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