A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology with pulse periodic reverse electroplating and photosensitive resin

Abstract

A package-process-oriented multilevel 5-/spl mu/m-thick Cu wiring technology has been developed for low resistance power supply wirings in high-speed ULSIs. A thick Cu wiring fabricated by pulse periodic reverse electroplating achieves the good thickness uniformity without CMP process. A photosensitive resin as interlayer dielectric eliminates dry etching steps. Three layers of thick Cu wirings have been successfully fabricated on the top of a 0.13-/spl mu/m CMOS ULSI with three layers of 0.5 /spl mu/m-thick Al wiring. The total thick Cu wiring resistance is confirmed to be five times as small as that of the conventional two layers of 0.5-/spl mu/m-thick Al wirings. This simple technology is suitable for future low-cost ULSI global wirings.