Dynamics of Resistance Evolution During Electromigration

2006 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2006-10-01 DOI:10.1109/IRWS.2006.305204

X. Federspiel, D. Ney, L. Doyen, V. Girault

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引用次数: 10

Abstract

The careful analysis of resistance evolution with time during electromigration tests provided valuable information about damascene architecture and intrinsic electromigration behaviour. We found first, that resistance evolution includes an abrupt event, the amplitude of which is usually corresponding to the failure criteria and second, that the height of this step (and sample resistance) is correlated with time to fail. We showed that the evolution of time to step was more likely to be due to the vertical growth of a void which length is making resistance step amplitude varying from sample to sample. Second we found a correlation between sample initial resistance and time to failure that is believed to be due to trench depth. However this effect is widely spread and correlation coefficient is as low as 0.3. These 2 phenomena combined together, increase the standard deviation affecting lifetime. As a matter of fact, resistance increase rate is expected to be directly proportional to void growth rate and copper diffusion coefficient whereas step height is function of the void shape and barrier thickness

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电迁移过程中电阻演化动力学

在电迁移试验期间，仔细分析电阻随时间的演变，提供了有关大马士革结构和固有电迁移行为的宝贵信息。首先，我们发现电阻演化包括一个突发事件，其振幅通常对应于失效准则;其次，该步骤的高度(和样本电阻)与失效时间相关。我们发现，时间阶跃的演变更可能是由于一个空洞的垂直生长，其长度使阻力阶跃的幅度随样品而变化。其次，我们发现了样本初始电阻和失效时间之间的相关性，这被认为是由于沟槽深度。然而，这种影响是普遍存在的，相关系数低至0.3。这两种现象结合在一起，增加了影响寿命的标准差。事实上，电阻增加速率与孔洞生长速率和铜扩散系数成正比，而台阶高度则是孔洞形状和势垒厚度的函数

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2006 IEEE International Integrated Reliability Workshop Final Report

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