Partial discharges in silicone gel in the temperature range 20-150°C

M. T. Do, J. Augé, O. Lesaint
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引用次数: 10

Abstract

In order to increase the knowledge of the processes involved during the degradation of insulating silicone gels under AC stress, recordings of the activity of partial discharges (PD) are performed. Silicone gels are commonly used for the insulation and packaging of high voltage semiconductors such as IGBT modules. We worked on a commercially available dielectric silicone gel. Electrical and optical apparatus allows the measurement of PD's and their location, either on actual power module substrates, or in a point-plane gap. The temperature dependence of PD inception voltage is moderate, while the number of PD's and their charge steeply increases versus temperature. We show that the formation of cavities constitutes the main factor responsible for the degradation under AC conditions. The actual self-healing capabilities of silicone gels are also studied and discussed
在温度范围20-150°C的硅凝胶中局部放电
为了增加对绝缘硅胶在交流应力下降解过程的了解,进行了部分放电(PD)活动的记录。硅凝胶通常用于IGBT模块等高压半导体的绝缘和封装。我们研究了一种市售的介电硅凝胶。电气和光学设备允许测量PD及其位置,无论是在实际的功率模块基板上,还是在点平面间隙中。PD起始电压的温度依赖性较弱,而PD的数量和电荷量随温度的升高而急剧增加。我们发现,在交流条件下,空腔的形成是导致降解的主要因素。并对硅胶的实际自愈能力进行了研究和讨论
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