Dimitri Soussan, S. Majcherczak, A. Valentian, M. Belleville
{"title":"A low jitter active body-biasing control-based output buffer in 65nm PD-SOI","authors":"Dimitri Soussan, S. Majcherczak, A. Valentian, M. Belleville","doi":"10.1109/ICICDT.2011.5783232","DOIUrl":null,"url":null,"abstract":"This paper proposes a specific low jitter and high speed Ouput interface which takes advantage of the Partially Depleted Silicon-on-Insulator technology while avoiding its drawbacks related to floating body effects. Thanks to an active body-biasing control technique, the additional jitter related to PD-SOI history effect, as well as the higher static leakage current compared to bulk technology, are more than compensated. In depth analyses are presented to highlight the robustness of this technique with respect to the other solutions considering various capacitive loads and temperatures.","PeriodicalId":402000,"journal":{"name":"2011 IEEE International Conference on IC Design & Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on IC Design & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2011.5783232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper proposes a specific low jitter and high speed Ouput interface which takes advantage of the Partially Depleted Silicon-on-Insulator technology while avoiding its drawbacks related to floating body effects. Thanks to an active body-biasing control technique, the additional jitter related to PD-SOI history effect, as well as the higher static leakage current compared to bulk technology, are more than compensated. In depth analyses are presented to highlight the robustness of this technique with respect to the other solutions considering various capacitive loads and temperatures.