A low jitter active body-biasing control-based output buffer in 65nm PD-SOI

Dimitri Soussan, S. Majcherczak, A. Valentian, M. Belleville
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引用次数: 3

Abstract

This paper proposes a specific low jitter and high speed Ouput interface which takes advantage of the Partially Depleted Silicon-on-Insulator technology while avoiding its drawbacks related to floating body effects. Thanks to an active body-biasing control technique, the additional jitter related to PD-SOI history effect, as well as the higher static leakage current compared to bulk technology, are more than compensated. In depth analyses are presented to highlight the robustness of this technique with respect to the other solutions considering various capacitive loads and temperatures.
基于65nm PD-SOI的低抖动有源体偏置控制输出缓冲器
本文提出了一种特殊的低抖动和高速输出接口,该接口利用了部分耗尽绝缘体上硅技术,同时避免了其与浮体效应相关的缺点。由于采用了有源体偏置控制技术,与PD-SOI历史效应相关的额外抖动,以及与本体技术相比更高的静态泄漏电流,都得到了补偿。在深入的分析提出,以强调该技术的鲁棒性相对于其他解决方案考虑到各种容性负载和温度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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