Si:Er-based light emitting diodes for optoelectronic applications grown with sublimation MBE technique

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416696

Z. F. Krasil'nik, V. P. Kuznetsov, D. Remizov, V. Shmagin

引用次数: 0

Abstract

Various types of Si:Er-based LEDs grown with sublimation variant of traditional MBE (SMBE) technique are examined. The effect of breakdown nature on Er-related EL intensity and excitation efficiency is also investigated.

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用升华MBE技术生长的光电应用硅:铒基发光二极管

研究了利用传统MBE (SMBE)技术的升华变体生长的各种类型的Si: er基led。同时研究了击穿性质对铒相关电致发光强度和激发效率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First IEEE International Conference on Group IV Photonics, 2004.

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