Empirical all region current based PHEMT DC model

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678) Pub Date : 2003-11-17 DOI:10.1109/IMOC.2003.1244839

J. Gao, X. Li, H. Wang, G. Boeck

引用次数: 4

Abstract

This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 /spl times/ 40) /spl mu/m double heterostructure PHEMT.

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基于全区域电流的PHEMT直流经验模型

本文提出了一种改进的高、低电流双异质结构PHEMT直流模型，并对0.25(1 /spl倍/ 40)/spl μ m双异质结构PHEMT的模拟结果与实测结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003. (Cat. No.03TH8678)

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