{"title":"A fine linear movement microactuator using a solid state technology","authors":"Sekwang Park","doi":"10.1109/IAS.1991.178218","DOIUrl":null,"url":null,"abstract":"A microactuator as a linear controllable movement device fabricated by solid state technology is introduced. It is composed of a PZT bar, two silicon pads, and a silicon substrate. It moves linearly forward and backward with a maximum speed of 16 mu m/sec/volt at the three phase input pulse power of 13.3 kHz. The size of the pad and oxide layer are determined by the coefficient of friction between base material (SiO/sub 2//Si) and the required pulling force. As the force pulling the pad becomes bigger, the size of the pad increases. From the experimental test of the device the static frictional coefficient between base (SiO/sub 2//Si) and pad surface (SiO/sub 2//Si) is determined as 0.64 under vacuum at 30 volts for clamping force. Basic information is presented in order to design an electrostatic or piezoelectric motor using solid state technology.<<ETX>>","PeriodicalId":294244,"journal":{"name":"Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1991.178218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A microactuator as a linear controllable movement device fabricated by solid state technology is introduced. It is composed of a PZT bar, two silicon pads, and a silicon substrate. It moves linearly forward and backward with a maximum speed of 16 mu m/sec/volt at the three phase input pulse power of 13.3 kHz. The size of the pad and oxide layer are determined by the coefficient of friction between base material (SiO/sub 2//Si) and the required pulling force. As the force pulling the pad becomes bigger, the size of the pad increases. From the experimental test of the device the static frictional coefficient between base (SiO/sub 2//Si) and pad surface (SiO/sub 2//Si) is determined as 0.64 under vacuum at 30 volts for clamping force. Basic information is presented in order to design an electrostatic or piezoelectric motor using solid state technology.<>