Evaluation of the absorption spectrum in quantum dots for efficient solar cells

Abstract

Today, possibility of photovoltaic efficiency increase with use of semiconductor quantum dots (QDs) in solid inorganic solar cells is a dynamic research field due to nanotechnology development and use of III-V and III-V nitride semiconductors (GaN or InGaN). Self-assembled quantum dots (SAQDs) growth in Stranski-Krastanov (SK) mode are very interesting nano-structures in order to achieve this goal. In this paper results derived by a FEM simulation analysis of absorption coefficient done on small zincblende InAs/GaAs and wurtzite InxGa1-xN/InyGa1-yN (In content x > y) SAQDs are shown and related to possible use in solar cells.