UV sensitive heterojunction ZnCoO/n-GaP prepared by spray pyrolysis

Abstract

The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.