Inhomogeneous lasing characteristics of InAs/InGaAsP quantum dot laser diodes at 15 K and 300 K

2008 International Nano-Optoelectronics Workshop Pub Date : 2008-09-26 DOI:10.1109/INOW.2008.4634534

E. Lee, N. Kim, J. Lee, D. Lee, S. H. Pyun, W. Jeong, J.W. Jang

引用次数: 0

Abstract

Small gain peak shift of 5 nm and broadening of gain spectrum are observed for InAs/InGaAsP quantum dot laser diodes at 15 and 300 K. This observation is likely due to inhomogeneous characteristics of quantum dot laser diodes.

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15 K和300 K下InAs/InGaAsP量子点激光二极管的非均匀激光特性

在15和300 K下，InAs/InGaAsP量子点激光二极管的增益峰移减小了5 nm，增益谱展宽。这种观察结果可能是由于量子点激光二极管的非均匀特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 International Nano-Optoelectronics Workshop

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