Real-time. In-circuit Temperature Sensing of an X-Band GaN Power Amplifier

2020 15th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2021-01-10 DOI:10.1109/EuMIC48047.2021.00021

S. Mahon, Olivia Ell, Leigh E. Milner, Evgeny Kuxa, A. Parker, Melissa C. Gorman, M. Heimlich

引用次数: 2

Abstract

A 10-watt X-band GaN power amplifier has been designed as a testbed to study amplifier temperature under a variety of biases and input drive levels using gate-resistance thermometry. Real-time, in-circuit temperature sensing is demonstrated and discussed for a range of biases and input levels.

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实时的。x波段氮化镓功率放大器的在线温度传感

设计了一个10瓦的x波段氮化镓功率放大器作为测试平台，利用门电阻测温法研究了各种偏置和输入驱动电平下的放大器温度。实时，在电路温度传感演示和讨论了一系列的偏置和输入电平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 15th European Microwave Integrated Circuits Conference (EuMIC)

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