A challenge over 100 Gbit/in/sup 2/ rewritable/removable MO storage

A. Itoh
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引用次数: 1

Abstract

The outline of our project towards 100 Gbit/in/sup 2/ density rewritable MO memory is summarized. It employs the first surface structure of the disk to avoid the increase of the aberration caused by the skew of the disk and the fluctuation of the substrate thickness, which will be dominant in high NA (0.9) and short wavelength optical systems. It is also employed the magnetic field modulation method (MFM) for writing and MAMMOS for reading.
对100 Gbit/in/sup /可重写/可移动MO存储的挑战
总结了100gbit /in/sup 2/密度可重写MO存储器项目的概要。它采用了光盘的第一表面结构,避免了光盘倾斜引起的像差增加和衬底厚度的波动,这将在高NA(0.9)和短波长的光学系统中占主导地位。它还采用磁场调制法(MFM)进行写入,MAMMOS进行读取。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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