13 GHz FET Negative Resistance 0.5 W Amplifier

1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI:10.1109/EUMA.1979.332718

S. Nicotra

引用次数: 5

Abstract

A two-stage 13 GHz negative resistance amplifier utilizing commercially available GaAs FETs in a sealed container has been realized. The amplifier performs a 0.5 W output power, a 16 dB linear gain, an AM to PM conversion cf less than 3°/dB in the instantaneous bandwidth of 500 MHz. The estimated MTTF exceeds 106 hours. Its application in a 34 Mbit/s 4-PSK 13 GHz radio link is being described.

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13 GHz FET负阻0.5 W放大器

利用市产的GaAs场效应管在密封容器中实现了一种两级13ghz负阻放大器。该放大器的输出功率为0.5 W，线性增益为16 dB，在500 MHz的瞬时带宽下，调幅到PM转换cf小于3°/dB。估计最长停留时间超过106小时。介绍了其在34mbit /s 4-PSK 13ghz无线链路中的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1979 9th European Microwave Conference

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